Multi-Stage Cascode in High-Voltage A1GaN/GaN-on-Si Technology

This work investigates a new approach of a multistage cascode. The concept is applied as intrinsic structure in an A1GaN/GaN-on-Si technology. The fabricated device achieves an off-state voltage >600 V and an on-state resistance of 14 Ω mm. A special pull-down pin is connected to the source of the highest segments. This pin can be used for characterization and is intended to drive further stacked cascade segments. Thus, integrated multi-stage cascodes are found suitable as flexible device for high voltage applications.

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