Transient analysis of electrolyte-gated organic field-effect transistors

A terminal charge and capacitance model is developed for transient behavior simulation of electrolyte-gated organic field effect transistors (EGOFETs). Based on the Ward-Dutton partition scheme, the charge and capacitance model is derived from our drain current model reported previously. The transient drain current is expressed as the sum of the initial drain current and the charging current, which is written as the product of the partial differential of the terminal charges with respect to the terminal voltages and the differential of the terminal voltages upon time. The validity for this model is verified by experimental measurements.

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