Comparative evaluation of static and dynamic performance of 1.2-kV SiC power switches

This paper presents a comprehensive experimental evaluation and comparison of several state-of-the-art 1.2-kV silicon carbide (SiC) power switches. Specifically, the latest generation of planar and trench SiC MOSFETs as well as the cascode SiC JFET are characterized and compared with respect to their static and dynamic performance. The switching performance of these devices are evaluated with both their intrinsic body-diode and external SiC Schottky Barrier Diode (SBD) as the freewheeling device. Based on the evaluated performance, the advantages and disadvantages of tested SiC devices are summarized.

[1]  W. Bergner,et al.  The New CoolSiC™ Trench MOSFET Technology for Low Gate Oxide Stress and High Performance , 2017 .

[2]  J. Gafford,et al.  Evaluation of 1.2 kV, 100A SiC modules for high-frequency, high-temperature applications , 2015, 2015 IEEE Applied Power Electronics Conference and Exposition (APEC).

[3]  C. Dimarino.  High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors , 2014 .

[4]  Javier Sebastian,et al.  Switching Performance Comparison of the SiC JFET and SiC JFET/Si MOSFET Cascode Configuration , 2014, IEEE Transactions on Power Electronics.

[5]  Leon M. Tolbert,et al.  Methodology for switching characterization evaluation of wide band-gap devices in a phase-leg configuration , 2014, 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014.

[6]  R. Burgos,et al.  High-temperature characterization and comparison of 1.2 kV SiC power MOSFETs , 2013, 2013 IEEE Energy Conversion Congress and Exposition.

[7]  Alberto Rodriguez,et al.  Switching performance comparison of the SiC JFET and the SiC JFET/Si MOSFET cascode configuration , 2013, 2013 IEEE Energy Conversion Congress and Exposition.

[8]  F. Udrea,et al.  Comparative analysis of static and switching performance of 1.2 kV commercial SiC transistors for high power density applications , 2013, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.

[9]  Zhe Zhang,et al.  Switching performance evaluation of commercial SiC power devices (SiC JFET and SiC MOSFET) in relation to the gate driver complexity , 2013, 2013 IEEE ECCE Asia Downunder.

[10]  Lin Cheng,et al.  Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of −187°C to 300°C , 2012, Journal of Electronic Materials.

[11]  J. Gafford,et al.  Comparative analysis of commercially available silicon carbide transistors , 2012, 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[12]  J. Glaser,et al.  Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications , 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[13]  John S. Glaser,et al.  Recent advances in silicon carbide MOSFET power devices , 2010, 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[14]  Honggang Sheng,et al.  Investigation of 1.2 kV SiC MOSFET for high frequency high power applications , 2010, 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[15]  Zheng Chen.  Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices , 2009 .

[16]  R. Burgos,et al.  Characterization and modeling of 1.2 kv, 20 A SiC MOSFETs , 2009, 2009 IEEE Energy Conversion Congress and Exposition.

[17]  R. Burgos,et al.  Design considerations of a fast 0-Ω gate-drive circuit for 1.2 kV SiC JFET devices in phase-leg configuration , 2009, 2009 IEEE Energy Conversion Congress and Exposition.