Refinement of Intentions

According to Bratman, future-directed intentions are high-level plans. We view such plans as high-level actions that can typically not be executed directly: they have to be progressively refined until executable basic actions are obtained. Higher- and lower-level actions are linked by the means-end relation, alias instrumentality relation. In this paper we extend Shoham’s database perspective of Bratman’s theory by the notions of refinement and instrumentality.

[1]  M. M. Sigalas,et al.  Ab initio study of boron and aluminum hydrides nanoparticles , 2016 .

[2]  Alessio Lomuscio,et al.  MCMAS-SLK: A Model Checker for the Verification of Strategy Logic Specifications , 2014, CAV.

[3]  Stacey F. Bent,et al.  A brief review of atomic layer deposition: from fundamentals to applications , 2014 .

[4]  Emiliano Lorini,et al.  Building Epistemic Logic from Observations and Public Announcements , 2016, KR.

[5]  Steven M. George,et al.  Al3O3 thin film growth on Si(100) using binary reaction sequence chemistry , 1997 .

[6]  J. M. Ballingall,et al.  The operation of metalorganic bubblers at reduced pressure , 1990 .

[7]  D. W. Robinson,et al.  Low temperature atomic layer growth of aluminum nitride on Si(100) using dimethylethylamine alane and 1,1-dimethylhydrazine , 2000 .

[8]  Frank Dignum,et al.  Intentional Agents and Goal Formation , 1997, ATAL.

[9]  Charles B. Musgrave,et al.  Quantum chemical study of the mechanism of aluminum oxide atomic layer deposition , 2002 .

[10]  Emiliano Lorini,et al.  A Dynamic Logic of Normative Systems , 2011, IJCAI.

[11]  Andreas Herzig,et al.  On Hierarchical Task Networks , 2016, JELIA.

[12]  Michael E. Bratman,et al.  Intention, Belief, and Instrumental Rationality , 2018, Oxford Scholarship Online.

[13]  K. Jensen,et al.  Pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine‐alane: Characterization and a new two‐step writing process , 1994 .

[14]  Geoffrey Pourtois,et al.  Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates , 2012 .

[15]  S. George,et al.  Low-Temperature Al2O3 Atomic Layer Deposition , 2004 .

[16]  D. Poquillon,et al.  Al–Pt MOCVD coatings for the protection of Ti6242 alloy against oxidation at elevated temperature , 2005 .

[17]  Qiang Sun,et al.  Cyclic and linear polymeric structures of AlnH3n (n=3?7) molecules , 2003 .

[18]  Michael Wooldridge,et al.  On the logic of cooperation and propositional control , 2005, Artif. Intell..

[19]  Alain Estève,et al.  A methodology for the kinetic Monte Carlo simulation of alumina atomic layer deposition onto silicon , 2005 .

[20]  Luke Hunsberger,et al.  Dynamic intention structures I: a theory of intention representation , 2008, Autonomous Agents and Multi-Agent Systems.

[21]  Andreas Herzig,et al.  Dynamic Logic of Propositional Assignments: A Well-Behaved Variant of PDL , 2013, 2013 28th Annual ACM/IEEE Symposium on Logic in Computer Science.

[22]  Emiliano Lorini,et al.  BDI Logics for BDI Architectures: Old Problems, New Perspectives , 2016, KI - Künstliche Intelligenz.

[23]  K. Masu,et al.  Superiority of DMAH to DMEAA for al CVD technology , 1999 .

[24]  Yuanyuan Xie,et al.  Experimental and numerical investigations into the transient multi-wafer batch atomic layer deposition process with vertical and horizontal wafer arrangements , 2015 .

[25]  Mansoo Park,et al.  Fourier transform infrared diagnostics of gas phase reactions in the metalorganic chemical vapor deposition of aluminum from dimethylethylamine alane , 1998 .

[26]  Ulrich Endriss,et al.  A Syntactic Proof of Arrow's Theorem in a Modal Logic of Social Choice Functions , 2015, AAMAS.

[27]  Lin Padgham,et al.  Hierarchical planning in BDI agent programming languages: a formal approach , 2006, AAMAS '06.

[28]  C. Yuan,et al.  Investigating atomic layer deposition characteristics in multi-outlet viscous flow reactors through reactor scale simulations , 2015 .

[29]  Andreas Herzig,et al.  DL-PA and DCL-PC: model checking and satisfiability problem are indeed in PSPACE , 2014, ArXiv.

[30]  C. Yuan,et al.  Effects of gap size, temperature and pumping pressure on the fluid dynamics and chemical kinetics of in-line spatial atomic layer deposition of Al 2 O 3 , 2016 .

[31]  James A. Hendler,et al.  HTN Planning: Complexity and Expressivity , 1994, AAAI.

[32]  Emiliano Lorini,et al.  A Poor Man's Epistemic Logic Based on Propositional Assignment and Higher-Order Observation , 2015, LORI.

[33]  A. Boudouvis,et al.  Multiscale modeling and experimental analysis of chemical vapor deposited aluminum films: Linking reactor operating conditions with roughness evolution , 2016 .

[34]  Emiliano Lorini,et al.  A logic of intention and attempt , 2008, Synthese.

[35]  C. Yuan,et al.  Improving atomic layer deposition process through reactor scale simulation , 2014 .

[36]  A. Boudouvis,et al.  Combined Macro/Nanoscale Investigation of the Chemical Vapor Deposition of Fe from Fe(CO)5 , 2017 .

[37]  Yoav Shoham,et al.  Joint revision of belief and intention , 2010, KR 2010.

[38]  Maria Fox,et al.  Modelling Mixed Discrete-Continuous Domains for Planning , 2006, J. Artif. Intell. Res..

[39]  W. Gladfelter,et al.  Selective Area Chemical Vapor Deposition of Aluminum Using Dimethylethylamine Alane , 1994 .

[40]  Michael E. Bratman Reasons for Action: Intention, belief, and instrumental rationality , 2009 .

[41]  Seung Hwan Ko,et al.  Long-term sustainable aluminum precursor solution for highly conductive thin films on rigid and flexible substrates. , 2014, ACS applied materials & interfaces.

[42]  Michael Wooldridge,et al.  On the complexity of practical ATL model checking , 2006, AAMAS '06.

[43]  B. Ahn,et al.  Effect of temperature and substrate on the growth behaviors of chemical vapor deposited Al films with dimethylethylamine alane source , 1998 .

[44]  R. Adomaitis,et al.  Modeling alumina atomic layer deposition reaction kinetics during the trimethylaluminum exposure , 2013, Theoretical Chemistry Accounts.

[45]  S. Rhee,et al.  Metal-organic chemical vapor deposition of aluminum from dimethylethylamine alane , 1998 .

[46]  Kari Laasonen,et al.  First principles study of the atomic layer deposition of alumina by TMA-H2O-process. , 2015, Physical chemistry chemical physics : PCCP.

[47]  Ulrich Endriss,et al.  Lifting integrity constraints in binary aggregation , 2013, Artif. Intell..

[48]  Chak-Kuen Wong,et al.  On the Number of Comparisons to Find the Intersection of Two Relations , 1979, SIAM J. Comput..

[49]  Chris R. Kleijn,et al.  Computational modeling of transport phenomena and detailed chemistry in chemical vapor deposition : a benchmark solution , 2000 .

[50]  K. J. Kuijlaars,et al.  Multi-scale modeling of chemical vapor deposition processes for thin film technology , 2007 .

[51]  K. Yamashita,et al.  Quantum chemical calculations on Al-CVD using DMEAA: surface reaction mechanism of AlH3 on Al(111) , 2003 .

[52]  K. Choy Chemical vapour deposition of coatings , 2003 .

[53]  D. Mangelinck,et al.  Al-Cu intermetallic coatings processed by sequential metalorganic chemical vapour deposition and post­deposition annealing , 2012 .

[54]  Yuanyuan Xie,et al.  On the physical and chemical details of alumina atomic layer deposition: A combined experimental and numerical approach , 2015 .

[55]  Steven M. George,et al.  Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition , 2002 .

[56]  A. Boudouvis,et al.  Multiscale modeling in chemical vapor deposition processes: Coupling reactor scale with feature scale computations , 2010 .

[57]  Yuanyuan Xie,et al.  Optimizing the process efficiency of atomic layer deposition of alumina for its sustainability improvement: a combined experimental and modeling study , 2016 .

[58]  Santanu Chaudhuri,et al.  Formation and bonding of alane clusters on Al(111) surfaces studied by infrared absorption spectroscopy and theoretical modeling. , 2008, Journal of the American Chemical Society.

[59]  Gary W. Rubloff,et al.  Impact of parasitic reactions on wafer-scale uniformity in water-based and ozone-based atomic layer deposition , 2011 .

[60]  Michael Wooldridge,et al.  Computationally grounded theories of agency , 2000, Proceedings Fourth International Conference on MultiAgent Systems.

[61]  Tianxiang Li,et al.  Gas-phase reactions during CVD synthesis of carbon nanotubes: Insights via numerical experiments , 2006 .

[62]  Emiliano Lorini,et al.  Epistemic Boolean Games Based on a Logic of Visibility and Control , 2016, IJCAI.

[63]  Alan W. Weimer,et al.  Atomic layer deposition of ultrathin and conformal Al2O3 films on BN particles , 2000 .

[64]  M. Yokoyama,et al.  Contribution of free electrons to Al CVD on a Si surface by photo-excitation , 1994 .

[65]  R. Letterman,et al.  Modeling the effects of hydrolyzed aluminum and solution chemistry on flocculation kinetics. , 1985, Environmental science & technology.

[66]  W. Deen Analysis Of Transport Phenomena , 1998 .

[67]  T. Amazawa,et al.  Planarized multilevel interconnection using chemical mechanical polishing of selective CVD-Al via plugs , 1998 .

[68]  Yuanyuan Xie,et al.  Mechanistic modeling of atomic layer deposition of alumina process with detailed surface chemical kinetics , 2015 .

[69]  C. J. Smit,et al.  Preparation and properties of alane dimethylethylamine, a liquid precursor for MOCVD , 1994 .

[70]  A. Boudouvis,et al.  Reaction and Transport Interplay in Al MOCVD Investigated Through Experiments and Computational Fluid Dynamic Analysis , 2010 .

[71]  Michael E. Bratman,et al.  Intention, Plans, and Practical Reason , 1991 .

[72]  Lin Padgham,et al.  First principles planning in BDI systems , 2009, AAMAS.

[73]  Aniello Murano,et al.  Reasoning About Strategies: On the Model-Checking Problem , 2011, ArXiv.

[74]  Steven M. George,et al.  Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequence , 1995 .

[75]  Hector J. Levesque,et al.  Intention is Choice with Commitment , 1990, Artif. Intell..

[76]  R. Schlögl,et al.  Al13Fe4 as a low-cost alternative for palladium in heterogeneous hydrogenation. , 2012, Nature materials.

[77]  An experimental and computational analysis of a MOCVD process for the growth of Al films using DMEAA , 2007 .

[78]  Mehdi Dastani,et al.  AGM Revision of Beliefs about Action and Time , 2015, IJCAI.

[79]  Jesse S. Jur,et al.  Effect of temperature and gas velocity on growth per cycle during Al2O3 and ZnO atomic layer deposition at atmospheric pressure , 2012 .

[80]  Effect of Process Pressure on Atomic Layer Deposition of Al2O3 , 2007 .

[81]  R. Adomaitis,et al.  Anomalously high alumina atomic layer deposition growth per cycle during trimethylaluminum under-dosing conditions , 2017 .

[82]  Yoav Shoham,et al.  Logical Theories of Intention and the Database Perspective , 2009, J. Philos. Log..

[83]  Sarit Kraus,et al.  Postulates for revising BDI structures , 2010, Synthese.

[84]  U. Kattner,et al.  An assessment of the entire Al–Fe system including D03 ordering , 2009 .

[85]  Michael Wooldridge,et al.  Reasoning About the Transfer of Control , 2014, J. Artif. Intell. Res..

[86]  S. George Atomic layer deposition: an overview. , 2010, Chemical reviews.

[87]  G. Higashi,et al.  Sequential surface chemical reaction limited growth of high quality Al2O3 dielectrics , 1989 .

[88]  V. Prasad,et al.  Predictive modeling of atomic layer deposition on the feature scale , 2002 .

[89]  Jan van Eijck,et al.  Symbolic Model Checking for Dynamic Epistemic Logic , 2015, LORI.

[90]  P. Coutrot,et al.  Alkyl dichloroacetates: A novel application in the preparation of highly functionalised aziridines from imines , 1985 .

[91]  J. Dix,et al.  Model Checking Logics of Strategic Ability: Complexity* , 2010 .

[92]  Xiaodong Li,et al.  Microstructure and deposition rate of aluminum thin films from chemical vapor deposition with dimethylethylamine alane , 1996 .

[93]  David J. Israel,et al.  Plans and resource‐bounded practical reasoning , 1988, Comput. Intell..

[94]  James C. Greer,et al.  Simulating the atomic layer deposition of alumina from first principles , 2004 .

[95]  Thomas A. Henzinger,et al.  Alternating-time temporal logic , 1997, Proceedings 38th Annual Symposium on Foundations of Computer Science.

[96]  Susan Lu,et al.  A study on crack propagation and electrical resistance change of sputtered aluminum thin film on poly ethylene terephthalate substrate under stretching , 2011 .

[97]  Chitta Baral,et al.  Reasoning about Intended Actions , 2005, AAAI.

[98]  Michael Wooldridge,et al.  Reasoning About Social Choice Functions , 2011, J. Philos. Log..

[100]  Marc Pauly,et al.  A Modal Logic for Coalitional Power in Games , 2002, J. Log. Comput..

[101]  H. Wenjie,et al.  Atomic layer deposition process optimization by computational fluid dynamics , 2016 .

[102]  R. Adomaitis,et al.  Modeling ALD Surface Reaction and Process Dynamics using Absolute Reaction Rate Theory , 2013 .