A 4.1-pJ/b, 16-Gb/s Coded Differential Bidirectional Parallel Electrical Link

This paper introduces a novel signaling scheme for parallel high-speed interfaces. The new signaling, called coded differential (CD), maps two bits of information to four wires and, therefore, has the same pin-efficiency as differential signaling. The coding scheme is designed in such a way that the parallel interface preserves many of the attractive properties of a differential link such as low supply noise generation and immunity to common-mode noise. The CD receiver also incorporates differential detection with no need for a dc reference. In addition, the coding completely eliminates the first post-cursor intersymbol interference of the channel over the entire unit-interval at no loss in throughput. As a result, CD leads to substantial increase in timing margin compared with a differential link with 1-tap decision feedback equalizer (DFE). Unlike DFE, CD does not require channel tap estimation. The theory of CD signaling, the optimization of the encoder and the decoder, and the implementation details of a prototype system developed based on this scheme for graphics memory interfaces are described. The full-featured interface, implemented in a 40-nm CMOS process, transfers 8 × 16 Gb/s data over 16 wires and achieves an energy efficiency of 4.1 pJ/b. Eye diagram measurements on a scope indicate 30% improvement in timing margin compared with a 1-tap predictive DFE system.

[1]  Timothy M. Hollis Data Bus Inversion in High-Speed Memory Applications , 2009, IEEE Transactions on Circuits and Systems II: Express Briefs.

[2]  Ting Wu,et al.  A Tri-Modal 20-Gbps/Link Differential/DDR3/GDDR5 Memory Interface , 2012, IEEE Journal of Solid-State Circuits.

[3]  E. Alon,et al.  Autonomous dual-mode (PAM2/4) serial link transceiver with adaptive equalization and data recovery , 2005, IEEE Journal of Solid-State Circuits.

[4]  Ting Wu,et al.  A 12.8-Gb/s/link Tri-Modal Single-Ended Memory Interface , 2012, IEEE Journal of Solid-State Circuits.

[5]  Pervez M. Aziz,et al.  A 1.0625 $\sim$ 14.025 Gb/s Multi-Media Transceiver With Full-Rate Source-Series-Terminated Transmit Driver and Floating-Tap Decision-Feedback Equalizer in 40 nm CMOS , 2011, IEEE Journal of Solid-State Circuits.

[6]  Young-Hyun Jun,et al.  A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW , 2011, 2011 IEEE International Solid-State Circuits Conference.

[7]  Chih-Kong Ken Yang,et al.  A 10-mW 3.6-Gbps I/O transmitter , 2003, 2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408).

[8]  Hugh Mair,et al.  Analog-DFE-based 16Gb/s SerDes in 40nm CMOS that operates across 34dB loss channels at Nyquist with a baud rate CDR and 1.2Vpp voltage-mode driver , 2011, 2011 IEEE International Solid-State Circuits Conference.

[9]  Young-Hyun Jun,et al.  A 0.13-$\mu$ m CMOS 6 Gb/s/pin Memory Transceiver Using Pseudo-Differential Signaling for Removing Common-Mode Noise Due to SSN , 2009, IEEE Journal of Solid-State Circuits.

[10]  Peter Gregorius,et al.  A 75 nm 7 Gb/s/pin 1 Gb GDDR5 Graphics Memory Device With Bandwidth Improvement Techniques , 2010, IEEE Journal of Solid-State Circuits.

[11]  Amir Amirkhany,et al.  A 0.4mW/Gb/s 16Gb/s near-ground receiver front-end with replica transconductance termination calibration , 2012, 2012 IEEE International Solid-State Circuits Conference.

[12]  Young-Jung Choi,et al.  Wide-range fast-lock duty-cycle corrector with offset-tolerant duty-cycle detection scheme for 54nm 7Gb/s GDDR5 DRAM interface , 2009, 2009 Symposium on VLSI Circuits.

[13]  Jae-Hyung Lee,et al.  A 60nm 6Gb/s/pin GDDR5 Graphics DRAM with Multifaceted Clocking and ISI/SSN-Reduction Techniques , 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[14]  Aliazam Abbasfar,et al.  A 4.1pJ/b 16Gb/s coded differential bidirectional parallel electrical link , 2012, 2012 IEEE International Solid-State Circuits Conference.